(China (Mainland))
Product Summary
The K4M28323LH-HN75 is a 134,217,728 bits synchronous high data rate Dynamic RAM. The K4M28323LH-HN75 is organized as 4 x 1,048,576 words by 32 bits. It is fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst lengths and programmable latencies allow the K4M28323LH-HN75 to be useful for a variety of high bandwidth and high performance memory system applications
Parametrics
K4M28323LH-HN75 absolute maximum ratings: (1)Voltage on any pin relative to Vss:-1.0 to 3.6 V; (2)Voltage on VDD supply relative to Vss:-1.0 to 3.6 V; (3)Storage temperature:-55 to +150℃; (4)Power dissipation:1.0 W; (5)Short circuit current:50 mA.
Features
K4M28323LH-HN75 features: (1)2.5V power supply; (2)LVCMOS compatible with multiplexed address; (3)Four banks operation; (4)EMRS cycle with address key programs; (5)All inputs are sampled at the positive going edge of the system clock; (6)Burst read single-bit write operation; (7)Special Function Support:PASR (Partial Array Self Refresh), Internal TCSR (Temperature Compensated Self Refresh), DS (Driver Strength); (8)DQM for masking; (9)Auto refresh; (10)64ms refresh period (4K cycle); (11)Commercial Temperature Operation (-25℃ to 70℃); (12)Extended Temperature Operation (-25℃ to 85℃); (13)90Balls FBGA ( -FXXX -Pb, -HXXX -Pb Free).
Diagrams
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Data Sheet |
Negotiable |
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